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MMM5063 ordering information device device marking package MMM5063 see figure 25 module package information plastic package case 1383 (module, 7x7 mm) (scale 1:1) this document contains information on a pre-production product. specifications a nd pre-production information herein are subject to change without notice. ? motorola, inc., 2003. all rights reserved. the MMM5063 is a tri-band single supply rf power amplifier for gsm900/dcs1800/ pcs1900 gprs handheld radios. this fully integrated power amplifier uses a patented concept to realize the 50 ? matching on-chip through integration of passives on the gaas die. this allows module functionality in a very small 7 x 7 mm package and achieves best-in- class power amplifier performance and multi-band capability. applications: ? tri-band gsm900 dcs1800 and pcs1900 ? guaranteed for 25% duty cycle features: ? single supply enhancement mode gaas mesfet technology ? internal 50 ? input/output matching ? high gain three stage amplifier design ? typical 3.5 v characteristics: p out = 35.2 dbm, pae = 53% for gsm p out = 33.8 dbm, pae = 44% for dcs p out = 34 dbm, pae = 43% for pcs ? optimized and guaranteed for open-loop power control applications ? small 7 x 7 mm package advance information MMM5063/d rev. 0.2, 09/2003 tri-band gsm gprs 3.5 v power amplifier f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . archived by freescale semiconductor, inc. 2005 archived by freescale semiconductor, inc. 2005
2 MMM5063 advance information motorola electrical specifications figure 1. simplified block diagram 1 electrical specifications table 1. maximum ratings rating symbol value unit supply voltage v gsm1,2,3 , v dcs1,2,3 , v db 6.0 v rf input power gsm in, dcs/pcs in 11 dbm rf output power gsm section dcs/pcs section gsm out dcs/pcs out 38 36 dbm operating case temperature range t c -35 to 100 c storage temperature range t stg -55 to 150 c die temperature t j 150 c notes: 1. maximum ratings are those values beyond which damage to the device may occur. functional operation should be restricted to the limits in the electrical characteristics or recommended operating conditions tables. 2. esd (electrostatic discharge) immunity meets human body model (hbm) 150 v and machine model (mm) 50 v. additional esd data available upon request. 3. meets moisture sensitivity level (msl) 3. see figure 25 on page 17 for additional details. dcs/pcs amp gsm amp dcs/pcs out gsm out dcs/pcs in gsm in v dcs1 v reg v gsm1 v bs v apc v dcs2 v dcs3 v gsm2 v gsm3 v db this device contains 26 active transistors. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . archived by freescale semiconductor, inc. 2005 archived by freescale semiconductor, inc. 2005
electrical specifications motorola MMM5063 advance information 3 table 2. recommended operating conditions characteristic symbol min typ max unit drain supply voltage v gsm1,2,3 , v dcs1,2,3 2.7 - 5.5 v bias supply voltage v db 2.7 - 5.5 v regulated voltage v reg 2.5 2.8 3.0 v power control voltage v apc 01.82.8v band select v bs 02.83.0v input power gsm gsm in -1.0 - 8.0 dbm input power dcs/pcs dcs/pcs in 2.0 - 10 dbm table 3. control requirements characteristic symbol min typ max unit current for v reg @ 2.8 v i reg -7.710ma band select low band enable voltage high band enable voltage v bs 2.2 0 2.8 - - 0.3 v current for v bs = 2.8 v i bs - 0.76 1.0 ma table 4. electrical characteristics (peak measurement at 25% duty cycle, 4.6 ms period, t a = 25 c, unless otherwise noted.) characteristic symbol min typ max unit gsm 900 section (p in = -1.0 dbm, v gsm1,2,3 = 3.5 v pulsed, v db = 3.5 v, v reg = v bs = 2.8 v, v ramp = 1.8 v pulsed) frequency range bw 880 - 915 mhz output power p out 34.2 35.2 - dbm power added efficiency pae 48 53 - % output power @ low voltage (v gsm1,2,3 = 2.8 v pulsed, v db = 2.8 v) p out 32.5 33.4 - dbm power added efficiency @ low voltage (v gsm1,2,3 = 2.8 v pulsed, v db = 2.8 v) pae 48 54 - % harmonic output 2f o 3f o - - -37 -60 -33 -45 dbc f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . archived by freescale semiconductor, inc. 2005 archived by freescale semiconductor, inc. 2005
4 MMM5063 advance information motorola electrical specifications second harmonic leakage at dcs output (crosstalk isolation) --28-15dbm input return loss |s 11 | -10-db output power isolation (v ramp = 0 v, v gsm1,2,3 = 0 v) p off --45-40dbm noise power in rx band @ p in = -1.0 dbm (100 khz measurement bandwidth) @ f o + 10 mhz (f o = 915 mhz) @ f o + 20 mhz (f o = 915 mhz) np - - -80 -81 - - dbm noise power in rx band @ p in = 6.0 dbm (100 khz measurement bandwidth) @ f o + 10 mhz (f o = 915 mhz) @ f o + 20 mhz (f o = 915 mhz) np - - -84 -86 -77 -81 dbm stability-spurious output (p out = 5.0 to 35 dbm, load vswr = 6:1 all phase angles, adjust v ramp for specified power) p spur ---60dbc load mismatch stress (p out = 5.0 to 35 dbm, load vswr = 10:1 all phase angles, 5 seconds, adjust v ramp for specified power) no degradation in output power before and after test dcs section (p in = 2.0 dbm, v dcs1,2,3 = 3.5 v pulsed, v db = 3.5 v, v reg = 2.8 v, v ramp = 1.8 v pulsed, v bs = 0 v) frequency range bw 1710 - 1785 mhz output power p out 32.5 33.8 - dbm power added efficiency pae 38 44 - % output power @ low voltage (v dcs1,2,3 = 2.8 v pulsed, v db = 2.8 v) p out 31 32 - dbm power added efficiency @ low voltage (v dcs1,2,3 = 2.8 v pulsed, v db = 2.8 v) pae 38 45 - % harmonic output 2f o 3f o - - -65 -50 -45 -45 dbc input return loss |s 11 | -9.0-db output power isolation (v ramp = 0 v, v dcs1,2,3 = 0 v) p off --40-35dbm noise power in rx band @ p in = 2.0 dbm @ f o + 20 mhz (f o = 1785 mhz) (100 khz measurement bandwidth) np - -78 -75 dbm stability-spurious output (p out = 0 to 33 dbm, load vswr = 6:1 all phase angles, adjust v ramp for specified power) p spur ---60dbc table 4. electrical characteristics (continued) (peak measurement at 25% duty cycle, 4.6 ms period, t a = 25 c, unless otherwise noted.) characteristic symbol min typ max unit f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . archived by freescale semiconductor, inc. 2005 archived by freescale semiconductor, inc. 2005
electrical specifications motorola MMM5063 advance information 5 load mismatch stress (p out = 0 to 33 dbm, load vswr = 10:1 all phase angles, 5 seconds, adjust v ramp for specified power) no degradation in output power before and after test pcs section (p in = 3.0 dbm, v dcs1,2,3 = 3.5 v pulsed, v db = 3.5 v, v reg = 2.8 v, v ramp = 1.8 v pulsed, v bs = 0 v) frequency range bw 1850 - 1910 mhz output power p out 32.5 34 - dbm power added efficiency pae 37 43 - % output power @ low voltage (v dcs1,2,3 = 2.8 v pulsed, v db = 2.8 v) p out 31 32 - dbm power added efficiency @ low voltage (v dcs1,2,3 = 2.8 v pulsed, v db = 2.8 v) pae 37 43 - % harmonic output 2f o 3f o - - -65 -50 -45 -45 dbc input return loss |s 11 | -5.0-db output power isolation (v ramp = 0 v, v dcs1,2,3 = 0 v) p off --35-32dbm noise power in rx band @ p in = 3.0 dbm @ f o + 20 mhz (f o = 1910 mhz) (100 khz measurement bandwidth) np - -78 -75 dbm stability-spurious output (p out = 0 to 33 dbm, load vswr = 6:1 all phase angles, adjust v ramp for specified power) p spur ---60dbc load mismatch stress (p out = 0 to 33 dbm, load vswr = 10:1 all phase angles, 5 seconds, adjust v ramp for specified power) no degradation in output power before and after test table 4. electrical characteristics (continued) (peak measurement at 25% duty cycle, 4.6 ms period, t a = 25 c, unless otherwise noted.) characteristic symbol min typ max unit f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . archived by freescale semiconductor, inc. 2005 archived by freescale semiconductor, inc. 2005
6 MMM5063 advance information motorola typical performance characteristics 2 typical performance characteristics 2.1 gsm figure 2. output power versus frequency figure 3. power added efficiency versus frequency figure 4. crosstalk versus frequency figure 5. second harmonic output versus frequency 38 880 f, frequency (mhz) p o u t , o u t p u t p o w e r ( d b m ) 887 894 901 908 915 37 36 35 34 33 32 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = -35c 85c 60 880 f, frequency (mhz) p a e , p o w e r a d d e d e f f i c i e n c y ( % ) 887 894 901 908 915 55 50 45 40 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = -35c 85c -20 880 f, frequency (mhz) c r o s s t a l k ( d b m ) 887 894 901 908 915 -22 -28 -30 -32 -34 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = 85c -35c -26 -24 38 880 f, frequency (mhz) h 2 , s e c o n d h a r m o n i c ( d b c ) 887 894 901 908 915 37 36 35 34 32 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = 85c -35c 33 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . archived by freescale semiconductor, inc. 2005 archived by freescale semiconductor, inc. 2005
typical performance characteristics motorola MMM5063 advance information 7 2.2 dcs figure 6. third harmonic output versus frequency figure 7. output power versus frequency figure 8. power added efficiency versus frequency figure 9. second harmonic output versus frequency figure 10. third harmonic output versus frequency 70 880 f, frequency (mhz) h 3 , t h i r d h a r m o n i c ( d b c ) 887 894 901 908 915 69 67 66 65 63 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = -35c 85c 64 68 34.4 1710 f, frequency (mhz) p o u t , o u t p u t p o w e r ( d b m ) 1735 1760 1785 34 33.8 33.6 33.4 33.2 33 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = -35c 85c 34.2 48 1710 f, frequency (mhz) p a e , p o w e r a d d e d e f f i c i e n c y ( % ) 1735 1760 1785 45 44 43 42 41 40 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = -35c 85c 47 46 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 72 1710 f, frequency (mhz) h 2 , s e c o n d h a r m o n i c ( d b c ) 1735 1760 1785 70 69 68 67 66 65 25c t a = 85c - 35c 71 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 60 1710 f, frequency (mhz) h 3 , t h i r d h a r m o n i c ( d b c ) 1735 1760 1785 58 57 56 55 54 25c t a = -35c 85c 59 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . archived by freescale semiconductor, inc. 2005 archived by freescale semiconductor, inc. 2005
8 MMM5063 advance information motorola typical performance characteristics 2.3 pcs figure 11. output power versus frequency figure 12. power added efficiency versus frequency figure 13. second harmonic output versus frequency figure 14. third harmonic output versus frequency 34.8 1850 f, frequency ( mhz ) p o u t , o u t p u t p o w e r ( d b m ) 1865 1895 1910 34.2 33.8 33.6 33.4 33.2 33 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = -35c 85c 34.6 1880 34 34.4 46 1850 f, frequency ( mhz ) p a e , p o w e r a d d e d e f f i c i e n c y ( % ) 1865 1880 1910 44 42 40 38 36 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = -35c 85c 1895 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 70 1850 f, frequency (mhz) h 2 , s e c o n d h a r m o n i c ( d b c ) 1865 1880 1910 69 68 67 66 65 64 25c t a = 85c -35c 1895 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 59 1850 f, frequency (mhz) h 3 , t h i r d h a r m o n i c ( d b c ) 1865 1880 1910 53 52 51 50 49 25c t a = -35c 85c 54 1895 55 56 57 58 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . archived by freescale semiconductor, inc. 2005 archived by freescale semiconductor, inc. 2005
contact descriptions and connections motorola MMM5063 advance information 9 3 contact descriptions and connections figure 15. contact connections (bottom view) table 5. contact function description pin symbol description 1v reg regulated dc voltage for bias circuit 2v db dc supply voltage for active bias circuits connected to the battery 3 dcs/pcs out dcs/pcs rf output 4v dcs3 dcs/pcs dc supply voltage for 3rd stage 5v dcs2 dcs/pcs dc supply voltage for 2nd stage 6v dcs1 dcs/pcs dc supply voltage for 1st stage 7v apc power control for both line-ups (v apc = 0 v, p out = p off , v apc = 1.8 v, p out = p max ) 8 dcs/pcs in dcs/pcs rf input 9 gsm in gsm rf input 10 v gsm1 gsm dc supply voltage for 1st stage 11 v gsm2 gsm dc supply voltage for 2nd stage 12 v gsm3 gsm dc supply voltage for 3rd stage 13 gsm out gsm rf output 14 v bs band selection between gsm and dcs/pcs dcs/pcs out v db v reg v bs gsm out v gsm3 v gsm2 v gsm1 gsm in dcs/pcs in v ramp v dcs1 v dcs2 v dcs3 ground plane (0.95) (0.60) pin 1 pad corner note: for optimum performance v gsm1 and v gsm2 , as well as v dcs1 and v dcs2 , must be strapped together on the application demobard. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . archived by freescale semiconductor, inc. 2005 archived by freescale semiconductor, inc. 2005
10 MMM5063 advance information motorola application information 4 application information 4.1 power control considerations the MMM5063 is designed for open loop (drain control) applications. a pmos fet is used to switch the MMM5063 drain and vary the supply voltage from 0 to the battery voltage setting (v bat ). the simplified concept schematic (see figure 22) describes the application circuit used to control the device through the drain voltage. a drain control provides a linear transfer function which is repeatable versus control voltage (see figure 16). figure 16. output power versus drain voltage 4.2 gsm second harmonic (h2) trap circuitry when transmitting in gsm saturated mode, the second harmonic is naturally present at the rf output of the pa and reaches the antenna after additional filtering in the front-end. etsi specifies that harmonic level cannot exceed -36 dbm. in order to improve h2 rejection in low band (gsm), an h2 trap has been developed. the topology is based on a low pass cell filter (see figure 17) where the first shunt capacitor is actually part of the pa output match. figure 17. low pass filter this circuit reduces h2 level by 7 to 8 db with low in-band insertion losses (mainly due to the series inductor). moreover, this structure can be used to match power amplifier module output to the switchplexer. 4.0 0 v d 2 , drain voltage squared (v 2 ) p o u t , o u t p u t p o w e r ( w ) 2.0 4.0 6.0 8.0 10 12 14 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 7.5 nh coilcraft 0603 8.2 pf 0402 murata 460 ph 2.2 pf 0402 murata 460 ph switchplexer gsm out f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . archived by freescale semiconductor, inc. 2005 archived by freescale semiconductor, inc. 2005
application information motorola MMM5063 advance information 11 4.3 application schematics and printed circuit boards figure 18. open loop control application schematic figure 18 represents the complete power amplifier implementation including the MMM5063 amplifier module and the control circuitry. this functionality is realized with two separate printed circuit boards; the pa evaluation circuit with schematic shown in figure 21 and pcb layout shown in figure 23, and the power amplifier control loop with schematic shown in figure 22 and pcb layout shown in figure 24. the pa evaluation circuit is straightfoward and, due to the MMM5063s high level of integration, requires only a few passive components around the package. these components are mainly de-coupling capacitors. the power amplifier control loop is based on an operational amplifier driving a pmos transistor. the pmos device functions as a linear drain voltage regulator controlled by v ramp with a typical gain of 2 which is set through the resistive divider r4 and r5 as shown in figure 22. to control output power through the drain, v apc must be indexed to the drain voltage to prevent the pa section from drawing excessive current especially at low output power. nevertheless, v apc should stay above 0.8 v to provide sufficient gain for the line-up. figure 19 describes the application circuit used to control v apc through the drain voltage. it uses v reg to pre-position v apc at 0.9 v and add a voltage which is dependent on the drain voltage. figure 19. gsm out dcs/pcs out MMM5063 v db v d v apc ce pmos [note 1] battery v ramp v reg v bs gsm in dcs/pcs in [note 2] notes: 1. op/amp is either external (with an enable pin ce) or in an asic. 2. the MMM5063 requires 4 to 6 rf/lf decoupling capacitors (not shown). v reg = 2.8 v 0 v < v drain < v bat v apc r7 = 560 ? r8 = 1.0 k ? r vapc = 700 ? internal to the die f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . archived by freescale semiconductor, inc. 2005 archived by freescale semiconductor, inc. 2005
12 MMM5063 advance information motorola application information r8 and r vapc set v apc at 0.9 v while r7 sets the v apc slope. v apc versus v drain is shown in the figure 20. figure 20. v apc versus v drain i t is possible that the power control dac output voltage can be in the 200 mv to 2.0 v range. this raises a concern for the MMM5063 ramp control voltage (v ramp ) which must start at 0 v to get enough output power dynamic range. to overcome this limitation, a resistor (r6 in figure 22) is used to set an additional offset (200 mv with r6 = 39 k ? ). this residual voltage is then subtracted the dac output voltage through the differential operational amplifier. 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v drain (v) v apc (v) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . archived by freescale semiconductor, inc. 2005 archived by freescale semiconductor, inc. 2005
application information motorola MMM5063 advance information 13 figure 21. pa evaluation circuit d c s / p c s o u t g s m o u t c 7 2 2 p f c 1 0 4 7 p f c 1 7 3 . 9 p f c 1 2 2 2 p f c 1 6 6 . 8 p f c 5 2 2 0 p f c 1 8 1 0 0 p f c 1 4 1 0 n f c 3 n / c c 4 n / c c 8 2 2 p f c 1 5 1 0 n f c 1 3 n / c g s m i n v g s m 1 v g s m 2 v g s m 3 d c s / p c s o u t v d b v r e g v b s g s m o u t v d c s 3 v d c s 2 v d c s 1 v a p c d c s / p c s i n c 1 1 1 . 0 n f c 2 3 3 0 p f c 6 n / c c 9 1 0 n f c 1 n / c n o t e : n / c = n o c o n n e c t , d o n o t m o u n t . g s m i n d c s / p c s i n f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . archived by freescale semiconductor, inc. 2005 archived by freescale semiconductor, inc. 2005
14 MMM5063 advance information motorola application information figure 22. power amplifier control loop c1 68 f r3 12 k c3 15 pf c4 330 pf r6 39 k r4 5.6 k r5 5.6 k r11 150 ? c18 10 nf r2 150 ? c5 10 nf c6 47 nf r8 1.0 k r7 560 ? r10 n/c c2 330 pf c12 10 nf note: n/c = no connect, do not mount. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . archived by freescale semiconductor, inc. 2005 archived by freescale semiconductor, inc. 2005
application information motorola MMM5063 advance information 15 figure 23. pa evaluation circuit pcb table 6. pa evaluation circuit pcb bill of materials reference value part number manufacturer c1, c3, c4, c6, c13 n/c - do not mount c2 330 pf grm36cog330j50 murata c5 220 pf grm36x7r221k50 murata c7, c8, c12 22 pf grm36cog220j50 murata c9, c14, c15 10 nf grm36x7r103k25 murata c10 47 pf grm36cog470j50 murata c11 1.0 nf grm36x7r102k25 murata c16 6.8 pf grm36cog6r8j50 murata c17 3.9 pf grm36cog3r9j50 murata c18 100 nf grm36x7r104k25 murata j2, j3, j4, j5 50 ? 142-0711-821 johnson f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . archived by freescale semiconductor, inc. 2005 archived by freescale semiconductor, inc. 2005
16 MMM5063 advance information motorola application information figure 24. power amplifier control loop pcb table 7. power amplifier control loop pcb bill of materials reference value part number manufacturer c1 68 f 293d685x9020c sprague c2 330 pf grm36cog330j50 murata c3 15 pf grm36cog150j50 murata c4 330 pf grm36x7r331k50 murata c5, c12, c18 10 nf grm36x7r103k25 murata c6 47 nf grm36x7r473k10 murata j1, j2, j3 dc connector q1 power mosfet nths5445t on semiconductor q2 n/c - do not mount r1, r8 1.0 k crg0402 5% 1 ko neohm r2 150 ? crg0402 5% 150 o neohm r3 12 k crg0402 5% 12 ko neohm r4, r5 5.6 k crg0402 5% 5.6 ko neohm r6, r10 n/c - do not mount r7 560 ? crg0402 5% 560 o neohm r11 100 ? crg0402 5% 100 o neohm u1 cmos op amp ad8591 analog devices f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . archived by freescale semiconductor, inc. 2005 archived by freescale semiconductor, inc. 2005
packaging information motorola MMM5063 advance information 17 5 packaging information figure 25. packaging information marking (top view) MMM5063 awlyyww llllll ww tape & reel orientation (top view) tape width: 16.0 mm tape pitch 12 mm (part to part) reel diameter: 330 mm (13 in) component orientation: parts are to be orientated with pin 1 side closest to the tape's round sprocket holes on the tape's trailing edge. dry pack: this device meets moisture sensitiviy level (msl) 3. parts will be shipped in dry pack. parts must be stored at 30 c and 60% relative humidity with time out of dry pack not to exceed 168 hours. in the event that parts are not handled or stored within these limits, one of the following dry out procedures must be completed prior to reflow: 1) 40 c dry out: bake devices at 40 c t a 45 c, 5% relative humidity for at least 192 hours. 2) room temperature dry out: store devices at less than 20% relative humidity for at least 500 hours. marking: 1st line: motorola logo 2nd line: partnumber coded on 7 characters 3rd line: wafer lot number (coded on 6 characters) followed by wafer num- ber (coded on 3 digits) 4th line: assy site code (on 1 or 2 characters), followed by wafer lot num- ber (coded on 1 or 2 characte rs), followed by year (on 2 digits) and workweek (on 2 digits). shipping, packaging and marking information f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . archived by freescale semiconductor, inc. 2005 archived by freescale semiconductor, inc. 2005
18 MMM5063 advance information motorola packaging information figure 26. outline dimensions for 7x7 mm module (case 1383-02, issue a) 7 b 0.1 a 7 a 0.1 1.01 0.1 0.7 0.05 0 0.50.05 0 30.05 bottom view 2.370.05 0.50.05 0.50.05 0.80.05 1.20.05 2.9 0.97 2.4 3 . 1 5 2 . 4 1 . 6 5 1 . 0 3 2 . 8 2.4 2 . 5 5 0.07 1.02 1.77 2.52 3.15 2 . 2 0 . 3 0 . 7 2 . 2 4 3 . 1 5 2.215 0.50.05 sq 0.80.05 9x pin one ident 10.05 0.50.05 2.450.05 2.950.05 notes: 1. dimensions are in millimeters. 2. dimensions and tolerances per asme y14.5m, 1994. 3. applies to all pad locations. l b 0.1 c a f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . archived by freescale semiconductor, inc. 2005 archived by freescale semiconductor, inc. 2005
motorola MMM5063 advance information 19 notes f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . archived by freescale semiconductor, inc. 2005 archived by freescale semiconductor, inc. 2005
MMM5063/d how to reach us: usa/europe/locations not listed: motorola literature distribution; p.o. box 5405, denver, colorado 80217 1-303-675-2140 or 1-800-441-2447 japan: motorola japan ltd.; sps, technical information center, 3-20-1, minami-azabu minato-ku, tokyo 106-8573 japan 81-3-3440-3569 asia/pacific: motorola semiconductors h.k. ltd.; silicon harbour centre, 2 dai king street, tai po industrial estate, tai po, n.t., hong kong 852-26668334 technical information center: 1-800-521-6274 home page: http://www.motorola.com/semiconductors information in this document is provided solely to enable system and software implementers to use motorola products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. typical parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including typicals must be validated for each customer application by customers technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and the stylized m logo are registered in the u.s. patent and trademark office. all other product or service names are the property of their respective owners. motorola, inc. is an equal opportunity/affirmative action employer. ? motorola, inc. 2003 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . archived by freescale semiconductor, inc. 2005 archived by freescale semiconductor, inc. 2005

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